MAAPGM0080-DIE Datasheet | Tyco Electronics

.. Amplifier, Power, 1 W 2-18 GHz Features - 1 Watt Saturated Output Power Level - Variable Drain Voltage (6-10V) Operation ® - MSAG Process Rev Preliminary Datasheet Description The MAAPGM0080-DIE is a 2-stage 1 W distributed power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-’s repeatable, high performance and highly reliable Ga As Multifunction Self-Aligned Gate (MSAG™)Process, each device is 100% RF tested on wafer to ensure performance pliance. M/A-’s MSAG™ process Features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications - Electronic Warfare - Ultra Wideband (UWB) - Test Instrumentation Also Available in: Description Part Number Plastic MAAP-000080-PKG003 Sample Board (Die) MAAP-000080-SMB004 SAMPLES Mechanical Sample (Die) MAAP-000080-MCH000 Electrical Characteristics: TB = 10°C1, Z0 = 50Ω, VDD = 10V, IDQ = 750m A2, Pin = 22 d Bm, RG = 130Ω Parameter Bandwidth Output Power 1-d B pression Point Small Signal Gain Power Added Efficiency Input VSWR Output VSWR Gate Current Drain Current 1. 2. 1 M/A- Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A- makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A- assume any liability whatsoever arising out of the use or application of any...