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MAPLST0810-030CF - RF Power Field Effect Transistor

Key Features

  • Q Package Style Q Q Q Q Designed for 865 to 960 MHz Broadband Commercial and Base Station.

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www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 865 — 960 MHz, 30W, 26V 5/14/04 Preliminary MAPLST0810-030CF Features Q Package Style Q Q Q Q Designed for 865 to 960 MHz Broadband Commercial and Base Station Applications. Typical CW RF Performance at 960MHz, 26VDC: Q POUT: 30W (P1dB) Q Gain: 18dB Q Efficiency: 50% Ruggedness: 10:1 VSWR @ 30W CW, 26V, 925MHz High Gain, High Efficiency and High Linearity Excellent Thermal Stability P-239 Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 97 -40 to +150 +200 Units Vdc Vdc W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 1.