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MAPLST0822-002PP - RF Power Field Effect Transistor

Key Features

  • Designed for broadband commercial.

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www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 800—2200 MHz, 2W, 28V 4/14/05 Preliminary MAPLST0822-002PP Features Designed for broadband commercial applications up to 2.2GHz High Gain, High Efficiency and High Linearity Ease of Design for Gain and Insertion Phase Flatness Excellent Thermal Stability W-CDMA Performance at 2.17GHz, 28Vdc Average Output Power: 28dBm @ -39dBc ACPR Gain: 14.5dB (typ.) Efficiency: 23% (typ.) 10:1 VSWR Ruggedness at 2W (CW), 28V, 2.11GHz Performance at 960MHz, 26Vdc, P1dB Average Output Power: 2W min. Gain: 20dB (typ.) Efficiency: 50% (typ.