Datasheet4U Logo Datasheet4U.com

MAPLST0822-002PP - RF Power Field Effect Transistor

Features

  • Designed for broadband commercial.

📥 Download Datasheet

Datasheet preview – MAPLST0822-002PP

Datasheet Details

Part number MAPLST0822-002PP
Manufacturer Tyco Electronics
File Size 285.35 KB
Description RF Power Field Effect Transistor
Datasheet download datasheet MAPLST0822-002PP Datasheet
Additional preview pages of the MAPLST0822-002PP datasheet.

📁 Similar Datasheet

  • MAP-AM-265 - Micro Air Pump Motor (MITSUMI)
  • MAP-CA - Digital Signal Processor Chip (Equator Technologies)
  • MAP100 - High Voltage DC Contactors (TE)
  • MAP100RBAFE - High Voltage DC Contactors (TE)
  • MAP101 - High Voltage DC Contactors (TE)
  • MAP101RBAFE - High Voltage DC Contactors (TE)
  • MAP110 - MAP110 SERIES (Power-One)
  • MAP130 - Automatic 115/230 Input Voltage Selection (Power-One)
  • MAP140 - Universal Input 85-264 VAC (Power-One)
  • MAP200 - High Voltage DC Contactors (TE)
Other Datasheets by Tyco Electronics

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 800—2200 MHz, 2W, 28V 4/14/05 Preliminary MAPLST0822-002PP Features Designed for broadband commercial applications up to 2.2GHz High Gain, High Efficiency and High Linearity Ease of Design for Gain and Insertion Phase Flatness Excellent Thermal Stability W-CDMA Performance at 2.17GHz, 28Vdc Average Output Power: 28dBm @ -39dBc ACPR Gain: 14.5dB (typ.) Efficiency: 23% (typ.) 10:1 VSWR Ruggedness at 2W (CW), 28V, 2.11GHz Performance at 960MHz, 26Vdc, P1dB Average Output Power: 2W min. Gain: 20dB (typ.) Efficiency: 50% (typ.
Published: |