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MAPLST1820-090CF - RF Power Field Effect Transistor

Key Features

  • Designed for base station.

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www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 90W, 26V 5/14/04 Preliminary MAPLST1820-090CF Features Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier applications Q Package Style Typical EDGE performance @ 1880MHz, 26V, Idq=900mA: Q Output Power: 45W Q Power Gain: 13dB (typ.) Q Efficiency: 35% (typ.) P-240 Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 +20, -20 206 -40 to +150 +200 Units Vdc Vdc W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 0.