Datasheet4U Logo Datasheet4U.com

MAPLST1900-030CF - RF Power Field Effect Transistor

Features

  • Designed for PHS.

📥 Download Datasheet

Datasheet preview – MAPLST1900-030CF

Datasheet Details

Part number MAPLST1900-030CF
Manufacturer Tyco Electronics
File Size 260.10 KB
Description RF Power Field Effect Transistor
Datasheet download datasheet MAPLST1900-030CF Datasheet
Additional preview pages of the MAPLST1900-030CF datasheet.

📁 Similar Datasheet

  • MAP-AM-265 - Micro Air Pump Motor (MITSUMI)
  • MAP-CA - Digital Signal Processor Chip (Equator Technologies)
  • MAP100 - High Voltage DC Contactors (TE)
  • MAP100RBAFE - High Voltage DC Contactors (TE)
  • MAP101 - High Voltage DC Contactors (TE)
  • MAP101RBAFE - High Voltage DC Contactors (TE)
  • MAP110 - MAP110 SERIES (Power-One)
  • MAP130 - Automatic 115/230 Input Voltage Selection (Power-One)
  • MAP140 - Universal Input 85-264 VAC (Power-One)
  • MAP200 - High Voltage DC Contactors (TE)
Other Datasheets by Tyco Electronics

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 1890 — 1925 MHz, 30W, 26V 10/31/03 Preliminary MAPLST1900-030CF Features Designed for PHS applications in the 1890-1925 MHz frequency band. Q Package Style Q Typical performance in PHS mode at -68 dBc ACPR (600kHz): Q Average Output Power: 8W Q Gain: 13dB (typ.) Q Efficiency: 26% (typ.) 10:1 VSWR Ruggedness at 8W, 26V, 1890MHz) MAPLST1900-030CF Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 97 -40 to +150 +200 Units Vdc Vdc W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 1.
Published: |