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MAPLST1900-030CF - RF Power Field Effect Transistor

Key Features

  • Designed for PHS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 1890 — 1925 MHz, 30W, 26V 10/31/03 Preliminary MAPLST1900-030CF Features Designed for PHS applications in the 1890-1925 MHz frequency band. Q Package Style Q Typical performance in PHS mode at -68 dBc ACPR (600kHz): Q Average Output Power: 8W Q Gain: 13dB (typ.) Q Efficiency: 26% (typ.) 10:1 VSWR Ruggedness at 8W, 26V, 1890MHz) MAPLST1900-030CF Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 97 -40 to +150 +200 Units Vdc Vdc W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 1.