Datasheet4U Logo Datasheet4U.com

MAPLST1900-060CF - RF Power Field Effect Transistor

Key Features

  • Designed for PHS.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MAP-AM-265 Micro Air Pump Motor MITSUMI
MAP-CA Digital Signal Processor Chip Equator Technologies
MAP100 High Voltage DC Contactors TE
MAP100RBAFE High Voltage DC Contactors TE
MAP101 High Voltage DC Contactors TE

Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
MAPLST1900-030CF RF Power Field Effect Transistor
MAPLST1617-030CF RF Power Field Effect Transistor
MAPLST1820-030CF RF Power Field Effect Transistor
MAPLST1820-060CF RF Power Field Effect Transistor
MAPLST1820-090CF RF Power Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 1890 — 1925 MHz, 60W, 26V 10/31/03 Preliminary MAPLST1900-060CF Features Designed for PHS applications in the 1890-1925 MHz frequency band. Q Package Style Q Typical performance in PHS mode at -65 dBc ACPR (600kHz): Q Average Output Power: 16W Q Gain: 12.5dB (typ.) Q Efficiency: 26% (typ.) 10:1 VSWR Ruggedness at 16W, 26V, 1890MHz) MAPLST1900-060CF Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 97 -40 to +150 +200 Units Vdc Vdc W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 1.