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RoHS Compliant
MAPR-002729-170M00
Radar Pulsed Power Transistor 2.7-2.9GHz, 36V, 100µsec, 170W
Features
190W, 53% efficiency, typical RF performance 36V, 24W nominal RF input drive Designed for ATC radar applications NPN silicon microwave power transistor Common base, Class-C configuration High efficiency inter-digitated geometry Gold metallization system Internal input and output pre-matching Hermetic metal/ceramic package
MAXIMUM RATINGS Parameter
Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Storage Temperature Junction Temperature
Preliminary 1/2007
OUTLINE DRAWING
Symbol
VCES VEBO IC TSTG TJ
Rating
65 3.