MAPRST0912-350 Datasheet PDF - Tyco Electronics AVIONICS PULSED POWER TRANSISTOR Specs

MAPRST0912-350 - AVIONICS PULSED POWER TRANSISTOR

Datasheet Summary

Features

∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry ∗ Diffused Emitter Ballasting Resistors ∗ Gold Metalization System ∗ Internal Input and Output Impedance Matching ∗ Hermetic Metal/Ceramic Package.

Datasheet Details

Part number	MAPRST0912-350
Manufacturer	Tyco Electronics
File Size	139.38 KB
Description	AVIONICS PULSED POWER TRANSISTOR
Datasheet	MAPRST0912-350 Datasheet
Additional preview pages of the MAPRST0912-350 datasheet.

📁 Similar Datasheet

MAPRST0002 - Radar Pulsed Power Transistor (MA-COM Technology)

MAP-AM-265 - Micro Air Pump Motor (MITSUMI)

MAP-CA - Digital Signal Processor Chip (Equator Technologies)

MAP100 - High Voltage DC Contactors (TE)

MAP100RBAFE - High Voltage DC Contactors (TE)

MAP101 - High Voltage DC Contactors (TE)

MAP101RBAFE - High Voltage DC Contactors (TE)

MAP110 - MAP110 SERIES (Power-One)

MAP130 - Automatic 115/230 Input Voltage Selection (Power-One)

MAP140 - Universal Input 85-264 VAC (Power-One)

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com MAPRST0912-350 AVIONICS PULSED POWER TRANSISTOR 350 Watts, 960 - 1215 MHz, 10μs Pulse Width, 10% Duty Cycle OUTLINE DRAWING Preliminary Specification, Rev 02/03/2004 FEATURES ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry ∗ Diffused Emitter Ballasting Resistors ∗ Gold Metalization System ∗ Internal Input and Output Impedance Matching ∗ Hermetic Metal/Ceramic Package ABSOLUTE MAXIMUM RATINGS AT 25°C Parameter Symbol Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +25°C Junction Temperature Storage Temperature VCES VEBO IC PTOT TJ TSTG 65 3.0 32.

Published: Jul 27, 2007 |