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MAPRST0912-350 - AVIONICS PULSED POWER TRANSISTOR

Key Features

  • ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry ∗ Diffused Emitter Ballasting Resistors ∗ Gold Metalization System ∗ Internal Input and Output Impedance Matching ∗ Hermetic Metal/Ceramic Package.

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www.DataSheet4U.com MAPRST0912-350 AVIONICS PULSED POWER TRANSISTOR 350 Watts, 960 - 1215 MHz, 10μs Pulse Width, 10% Duty Cycle OUTLINE DRAWING Preliminary Specification, Rev 02/03/2004 FEATURES ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry ∗ Diffused Emitter Ballasting Resistors ∗ Gold Metalization System ∗ Internal Input and Output Impedance Matching ∗ Hermetic Metal/Ceramic Package ABSOLUTE MAXIMUM RATINGS AT 25°C Parameter Symbol Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +25°C Junction Temperature Storage Temperature VCES VEBO IC PTOT TJ TSTG 65 3.0 32.