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Advanced Datasheet
Rev 17-06-2005 MAPRST1030-1KS
Avionics Pulsed RF Power Transistor 1000 Watts, 1030 MHz, 10µs Pulse Width, 1% Duty Cycle
Features
• • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package
Outline Drawing
MAXIMUM RATINGS AT 25°C Parameter
Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +25° C Junction Temperature Storage Temperature
Symbol
VCES VEBO IC PTOT TJ TSTG
Rating
65 3.0 250 11.