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MAPRST1214-030UF - RADAR PULSED POWER TRANSISTOR

Key Features

  • ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry ∗ Diffused Emitter Ballasting Resistors ∗ Gold Metalization System ∗ Internal Input and Output Impedance Matching ∗ Hermetic Metal/Ceramic Package ∗ Typcial Second Harmonic Level < -30dBc.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MAPRST1214-030UF Preliminary Datasheet Revision 01/14/2003 FEATURES ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry ∗ Diffused Emitter Ballasting Resistors ∗ Gold Metalization System ∗ Internal Input and Output Impedance Matching ∗ Hermetic Metal/Ceramic Package ∗ Typcial Second Harmonic Level < -30dBc ABSOLUTE MAXIMUM RATINGS AT 25°C Parameter Symbol Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +25°C Junction Temperature Storage Temperature VCES VEBO IC PTOT TJ TSTG 70 3.0 4.8 145 200 -65 to +200 RADAR PULSED POWER TRANSISTOR 30W, 1.2-1.