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MAPRST2729-170M RADAR PULSED POWER TRANSISTOR
170 Wpk, 2700 - 2900 MHz, 100μs Pulse Width, 10% Duty Cycle
Preliminary Specification, Rev 03/30/2005 FEATURES
OUTLINE DRAWING
• Designed for ATC Radar Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metallization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic Package
ABSOLUTE MAXIMUM RATINGS AT 25°C Parameter Symbol Rating
Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature VCES VEBO IC PD TSTG TJ 65 3.
MAPRST2729-170M Datasheet
