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MRF134 Datasheet N-channel Mos Broadband Rf Power Fet

Manufacturer: Tyco Electronics (now TE Connectivity)

Overview: SEMICONDUCTOR TECHNICAL DATA Order this document by MRF134/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . .

Key Features

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  • 128 (continued) The Power RF characterization data were measured with a 68 ohm resistor shunting the MRF134 input port. The scattering parameters were measured on the MRF134 device alone with no external components. Table 1. Common Source Scattering Parameters VDS = 28 V, ID = 100 mA REV 6 6 f (MHz) 625 650 675 700 725 750 775 800 825 850 875 900 925 950 975 1000.

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