Datasheet Summary
SEMICONDUCTOR TECHNICAL DATA
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The RF MOSFET Line
RF Power Field-Effect Transistor
N- Channel Enhancement- Mode
. . . designed for wideband large- signal amplifier and oscillator applications up to 400 MHz range.
- Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB Efficiency
- 55% (Typical)
- Small- Signal and Large- Signal Characterization
- Typical Performance at 400 MHz, 28 Vdc, 5.0 W Output = 10.6 dB Gain
- 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR
- Low Noise Figure
- 2.0 dB (Typ) at 200 mA, 150 MHz
- Excellent Thermal Stability, Ideally Suited For Class A Operation
5.0 W, to 400 MHz N-...
