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MRF134 - N-CHANNEL MOS BROADBAND RF POWER FET

Key Features

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  • 128 (continued) The Power RF characterization data were measured with a 68 ohm resistor shunting the MRF134 input port. The scattering parameters were measured on the MRF134 device alone with no external components. Table 1. Common Source Scattering Parameters VDS = 28 V, ID = 100 mA REV 6 6 f (MHz) 625 650 675 700 725 750 775 800 825 850 875 900 925 950 975 1000.

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SEMICONDUCTOR TECHNICAL DATA Order this document by MRF134/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB Efficiency — 55% (Typical) • Small–Signal and Large–Signal Characterization • Typical Performance at 400 MHz, 28 Vdc, 5.0 W Output = 10.6 dB Gain • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR • Low Noise Figure — 2.0 dB (Typ) at 200 mA, 150 MHz • Excellent Thermal Stability, Ideally Suited For Class A Operation D MRF134 5.