MRF316
SEMICONDUCTOR TECHNICAL DATA
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The RF Line
NPN Silicon RF Power Transistor
. . . designed primarily for wideband large- signal output amplifier stages in the 30- 200 MHz frequency range.
- Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts Minimum Gain = 10 d B
- Built- In Matching Network for Broadband Operation
- 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
- Gold Metallization System for High Reliability Applications MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous Collector Current
- Peak Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 35 65 4.0 9.0 13.5 220 1.26
- 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C
80 W, 3.0- 200 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON
CASE 316- 01, STYLE 1
THERMAL CHARACTERISTICS
Characteristic Thermal...
