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SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF321/D
The RF Line
NPN Silicon RF Power Transistor
. . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts Power Gain = 12 dB Min Efficiency = 50% Min • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Gold Metallization System for High Reliability
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MRF321 Datasheet
