Tyco Electronics MRF321
RF POWER TRANSISTOR
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak Total Device Dissipation @ TA = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 33 60 4.0 1.1 1.5 27 160 –65 to +150 Unit Vdc Vdc Vdc Adc Watts mW/°C °C CASE 244–04, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 6.4 Unit °C/WELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 20 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 2.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 33 60 60 4.0 — — — — — — — — — — 1.0 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 500 mA, VCE = 5.0 Vdc) hFE 20 — 80 — NOTE: (continued) 1.