MRF327 Datasheet | Tyco Electronics

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF327/D The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large- signal output amplifier stages in the 100 to 500 MHz frequency range. - Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7.3 d B @ 400 MHz - Built- In Matching Network for Broadband Operation Using Double Match Technique - 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR .. 80 W, 100 to 500 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON - Gold Metallization System for High Reliability Applications - Characterized for 100 to 500 MHz MAXIMUM RATINGS Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current - Continuous Collector Current - Peak Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 33 60 4.0 9.0 12 250 1.43 - 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C CASE 316- 01, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.7 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector- Emitter Breakdown Voltage (IC = 80 m Adc, IB = 0) Collector- Emitter Breakdown Voltage (IC = 80 m Adc, VBE = 0) Emitter- Base Breakdown Voltage (IE = 8.0 m Adc, IC = 0) Collector- Base Breakdown Voltage (IC = 80 m Adc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)EBO V(BR)CBO ICBO 33 60 4.0 60 - - - - - - - - - - 5.0 Vdc Vdc Vdc Vdc m Adc ON CHARACTERISTICS DC Current Gain (IC = 4.0 Adc, VCE = 5.0 Vdc) h FE 20 - 80 - DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob - 95 125 p F NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF...