MRF393 Datasheet | Tyco Electronics

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF393/D The RF Line NPN Silicon Push-Pull RF Power Transistor . . . designed primarily for wideband large- signal output and driver amplifier stages in the 30 to 500 MHz frequency range. - Specified 28 Volt, 500 MHz Characteristics - Output Power = 100 W Typical Gain = 9.5 d B (Class AB); 8.5 d B (Class C) Efficiency = 55% (Typ) - Built- In Input Impedance Matching Networks for Broadband Operation - Push- Pull Configuration Reduces Even Numbered Harmonics .. 100 W, 30 to 500 MHz CONTROLLED “Q” BROADBAND PUSH- PULL RF POWER TRANSISTOR NPN SILICON - Gold Metallization System for High Reliability - 100% Tested for Load Mismatch 2 6 5, 8 7 3 CASE 744A- 01, STYLE 1 The MRF393 is two transistors in a single package with separate base and collector leads and emitters mon. This arrangement provides the designer with a space saving device capable of operation in a push- pull configuration. 1, 4 PUSH- PULL TRANSISTORS MAXIMUM RATINGS Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current - Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 30 60 4.0 16 270 1.54 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.65 Unit °C/W NOTE: 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF push- pull amplifier. REV 7 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Collector- Emitter Breakdown Voltage (IC = 50 m Adc, IB = 0) Collector- Emitter Breakdown Voltage (IC = 50 m Adc, VBE = 0) Emitter- Base Breakdown Voltage (IE = 5.0 m Adc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)EBO ICBO 30 60 4.0...