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PH0814-40 - Linear Power Transistor/ 40W 850 - 1450 MHz

Key Features

  • l l l l l l l l NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class AB Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Absolute‘tiaximum I Parameter 1 Collector-BaseVoltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation junction Temperature Storage Temperature Thermal Resistance ( Ratinas a.

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I .--em _-- an AMP company Linear Power Transistor, 40W 850 - 1450 MHz Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class AB Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Absolute‘tiaximum I Parameter 1 Collector-BaseVoltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation junction Temperature Storage Temperature Thermal Resistance ( Ratinas at 25°C / Symbol ( V,,, VEs VEBO ‘c PTO: TJ T ST0 8JC 1 Rating 56 56 3.0 5.6 175 200 -55 to +200 1.0 1 Units I v V v A W “C “C “Cl-W UNLESS CT-IERVISE NOTED. TCLERANCES ARE 1 I it .060’.002 (1521.