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Linear Power Transistor, 40W 850 - 1450 MHz
Features
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NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class AB Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package
Absolute‘tiaximum
I Parameter 1 Collector-BaseVoltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation junction Temperature Storage Temperature Thermal Resistance (
Ratinas at 25°C
/ Symbol ( V,,, VEs VEBO ‘c PTO: TJ T ST0 8JC 1 Rating 56 56 3.0 5.6 175 200 -55 to +200 1.0 1 Units I v V v A W “C “C “Cl-W
UNLESS CT-IERVISE NOTED. TCLERANCES ARE
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.060’.002 (1521.
PH0814-40 Datasheet
