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= an AMP
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company
Wireless Bipolar Power Transistor, 850 - 960 MHz
Features
Designed for Linear Amplifier Applications Class AB: -3OdBc Typ 3rd IMD at 15 Watts PEP Class A: +53dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Matching Diffused Emitter Ballasting
35W
PH081 o-35
.100*.010 (2.54t.25) I t .230 c5.?4)
Absolute‘ Maximum Ratings at 25°C
Electrical Characteristics
at 25°C
UNLESS
OTHERWISE
NOTED, TOLERANCES
ARE
INCHES f.005 ,.HILuNETERS tlsnn,
Typical Optimum Device Impedances
F(MHz) 600 650 900 q#4 1 .O + j3.7 1.9 1.3 + j4.3 j4.0 ZOAim 2.1 + j0.9 1.6+jO.4 1.6 + j0.7 i.i”Tw
- 2LOA
960
3.0 + j2.7
1.7 + jO.1
ZIN
Specifications
Subject
to Change
Without
Notice.
Wireless Bipolar Power Transistor, 35W
PH0810-35 v2.
PH081O-35 Datasheet
