PH1113-100 Description
M/A-’s PH1113-100 is a silicon bipolar NPN power transistor intended for use in L-band 1.1 - 1.3 GHz pulsed radars. Designed for mon-base, class C, broadband pulsed power applications, the PH1113-100 can produce 25 watts of output power with short pulse length (3µS) at 30 percent duty cycle. The transistor is housed in a 2-lead rectangular metal-ceramic flange package, with internal input and output impedance...
PH1113-100 Key Features
- NPN Silicon Microwave Power Transistor mon Base Configuration Broadband Class C Operation High Efficiency Interdigitated
- 1.3 GHz pulsed radars. Designed for mon-base, class C, broadband pulsed power