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PH1113-100 - Radar Pulsed Power Transistor - 100 Watts/ 1.1-1.3 GHz/ 3ms Pulse/ 30% Duty

General Description

M/A-COM’s PH1113-100 is a silicon bipolar NPN power transistor intended for use in L-band 1.1 - 1.3 GHz pulsed radars.

Designed for common-base, class C, broadband pulsed power applications, the PH1113-100 can produce 25 watts of output power with short pulse length (3µS) at 30 percent duty cycle.

Key Features

  • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Outline Drawing 1.

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Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
PH1090-15L AVIONICS PULSED POWER TRANSISTOR
PH1090-175L Avionics Pulsed Power Transistor - 175 Watts/ 1030-1090 MHz/ 250ms Pulse/
PH1090-350L Avionics Pulsed Power Transistor - 350 Watts/1030-1090 MHz/ 250us Pulse/ 10% Duty
PH1090-550S Avionics Pulsed Power Transistor - 550 Watts/1030-1090 MHz/ 10us Pulse/ 1% Duty
PH1090-700B Avionics Pulsed Power Transistor/ 700 Watts/1.03-1.09 GHz/ 32 mS Pulse/ 2% Duty
PH1090-75L AVIONICS PULSED POWER TRANSISTOR 75 WATTS/ 1030 - 1090 MHz/ 250us PULSE/ 10% DUTY
PH1214-110M Radar Pulsed Power Transistor - 110 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
PH1214-12M Radar Pulsed Power Transistor - 12 Watts/1.20-1.40 GHz/ 150 mS Pulse/ 10% Duty
PH1214-220M Radar Pulsed Power Transistor - 220 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
PH1214-25M Radar Pulsed Power Transistor - 25 Watts/ 1.20-1.40 GHz/ 150mS Pulse/ 10% Duty

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Radar Pulsed Power Transistor 100 Watts, 1.1-1.3 GHz, 3µs Pulse, 30% Duty PH1113-100 PH1113-100 Radar Pulsed Power Transistor - 100 Watts, 1.1-1.3 GHz, 3µs Pulse, 30% Duty Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Outline Drawing 1 Description M/A-COM’s PH1113-100 is a silicon bipolar NPN power transistor intended for use in L-band 1.1 - 1.3 GHz pulsed radars.