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an AMP
company
Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz
Features
Designed for Cellular Base Station Applications Class AB: -34 dBc Typ 3rd IMD at 2 Watts PEP Class A: +43 dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Matching Diffused Emitter Ballasting
2W
PH1819-2
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating Units
( Collector-BaseVoltage )Collector-EmmerVoltage Emitter-BaseVoltage CollectorCurrent
1 )
I
V,,, V,,, _-_ VEBO L
1 1
65 65 3.0 2.0
( v-1
I VI V A 1 W “C “C “C/W
I-Power Dissipation
Junction Temperature StorageTemperature Thermal Resistance
1
1
P, TJ T STG 8JC
(
13.5 200 -55 to +150 13
1
Electrical Characteristics
Parameter
at 25°C
Symbol Min
Max 1.