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PH2729-150M - Radar Pulsed Power Transistor-150 Watts 2.7-2.9 GHz/ 100ms Pulse/ 10% Duty

General Description

M/A-COM’s PH2729-150M is a silicon bipolar NPN transistor specifically designed for use in high efficiency, common base, Class C microwave power amplifiers.

It is ideally suited for SBand radar and pulsed power applications where the highest gain and saturated power are required.

Key Features

  • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metallization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Outline Drawing1.

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Part Number Description
PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS/ 2.70-2.90 GHz/ 100ms PULSE/ 10% DUTY
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PH2729-150M Radar Pulsed Power Transistor—150 Watts 2.7-2.9 GHz, 100µs Pulse, 10% Duty Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metallization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Outline Drawing1 Description M/A-COM’s PH2729-150M is a silicon bipolar NPN transistor specifically designed for use in high efficiency, common base, Class C microwave power amplifiers. It is ideally suited for SBand radar and pulsed power applications where the highest gain and saturated power are required.