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PH2731-20M - Radar Pulsed Power Transistor/ 2OW/ loops Pulse/ 10% Duty 2.7 - 3.1 GHz

Key Features

  • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigicated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic‘MetaUCeramic Package 9co ,-^ :22.85> Absolute Maximum Ratings at 25°C StorageTemperature T S% -65 to +200 “C UN-ESS 3-kERW:SE NOTED,.

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Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
PH2731-5M Radar Pulsed Power Transistor/ 5W/ IOOps Pulse/ 10% Duty
PH2729-150M Radar Pulsed Power Transistor-150 Watts 2.7-2.9 GHz/ 100ms Pulse/ 10% Duty
PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS/ 2.70-2.90 GHz/ 100ms PULSE/ 10% DUTY
PH2729-65M Radar Pulsed Power Transistor/ 65W/ loops Pulse/ 10% Duty 2.7 - 2.9 GHz
PH2729-8SM Radar Pulsed Power Transistor/ 8.5W/ loops Pulse/ 10% Duty 2.7 - 2.9 GHz

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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an AMP company Radar Pulsed Power Transistor, 2OW, loops Pulse, 10% Duty PH2731-20M 2.7 - 3.1 GHz v2.00 Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigicated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic‘MetaUCeramic Package 9co ,-^ :22.85> Absolute Maximum Ratings at 25°C StorageTemperature T S% -65 to +200 “C UN-ESS 3-kERW:SE NOTED, TDLERANZES 4RZ INS’S (MILLIMETERS i.O”j’ u *.13MY) Electrical Characteristics at 25°C Input Return Loss Load MismatchTolerance Load Mismatch Stablility RL VSWR-T VSWR-S 6 - 3:l 1.51 dB - I’,,=36 I’,,=36 V,,=36 V, P,,=3.0 W, F=2.7,2.9,3.1 GHz V, P,,=3.0 W, F=2.7,2.9,3.