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Radar Pulsed Power Transistor, 2OW, loops Pulse, 10% Duty PH2731-20M 2.7 - 3.1 GHz
v2.00
Features
NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigicated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic‘MetaUCeramic Package
9co
,-^ :22.85>
Absolute Maximum Ratings at 25°C
StorageTemperature
T S%
-65 to +200
“C
UN-ESS
3-kERW:SE
NOTED,
TDLERANZES
4RZ
INS’S (MILLIMETERS
i.O”j’ u
*.13MY)
Electrical Characteristics
at 25°C
Input Return Loss Load MismatchTolerance Load Mismatch Stablility
RL VSWR-T VSWR-S
6 -
3:l 1.51
dB -
I’,,=36 I’,,=36 V,,=36
V, P,,=3.0
W, F=2.7,2.9,3.1
GHz
V, P,,=3.0 W, F=2.7,2.9,3.
PH2731-20M Datasheet
