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PH2731-5M - Radar Pulsed Power Transistor/ 5W/ IOOps Pulse/ 10% Duty

Key Features

  • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic ~tal/Ceramic Package i :I6 51: 653 (22 85) ,930 C:O16> --c- Absolute Maximum Ratings at 25°C UN-ESS J-KRWISE NCTZD,.

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Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
PH2731-20M Radar Pulsed Power Transistor/ 2OW/ loops Pulse/ 10% Duty 2.7 - 3.1 GHz
PH2729-150M Radar Pulsed Power Transistor-150 Watts 2.7-2.9 GHz/ 100ms Pulse/ 10% Duty
PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS/ 2.70-2.90 GHz/ 100ms PULSE/ 10% DUTY
PH2729-65M Radar Pulsed Power Transistor/ 65W/ loops Pulse/ 10% Duty 2.7 - 2.9 GHz
PH2729-8SM Radar Pulsed Power Transistor/ 8.5W/ loops Pulse/ 10% Duty 2.7 - 2.9 GHz

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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an AMP company Radar Pulsed Power Transistor, 5W, IOOps Pulse, 10% Duty PH2731-5M 2.7 - 3.1 GHz v2.00 Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic ~tal/Ceramic Package i :I6 51: 653 (22 85) ,930 C:O16> --c- Absolute Maximum Ratings at 25°C UN-ESS J-KRWISE NCTZD, TJLERANCES ARE INWCS (MILL,HET=RS i.335 t,13HY) Electrical Characteristics at 25°C Broadband Test Fixture Impedances F(GHz) 2.70 2.90 3.10 ZFW) 40-j12 35-j16 30-j18 Z,,(Q) 25 + j3.5 16 + j2.4 12tj4.0 - TEST F:XiLlRC - - Specifmtions Subject to Change Without NotIce.