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Radar Pulsed Power Transistor, 5W, IOOps Pulse, 10% Duty PH2731-5M 2.7 - 3.1 GHz
v2.00
Features
NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic ~tal/Ceramic Package
i :I6 51:
653
(22 85)
,930
C:O16>
--c-
Absolute Maximum Ratings at 25°C
UN-ESS
J-KRWISE
NCTZD,
TJLERANCES
ARE
INWCS (MILL,HET=RS
i.335 t,13HY)
Electrical Characteristics
at 25°C
Broadband Test Fixture Impedances
F(GHz) 2.70 2.90 3.10 ZFW) 40-j12 35-j16 30-j18 Z,,(Q) 25 + j3.5 16 + j2.4 12tj4.0 -
TEST F:XiLlRC
-
-
Specifmtions
Subject to Change Without NotIce.