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PH2856-160 - Linear Accelerator Pulsed Power Transistor/ 16OW/ 12ms Pulse/ 10% Duty 2.856 GHz

Features

  • l l l l l l l l PH2856-160 NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic-Metal/Ceramic Package Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage ] Collector Current (Peak) Total Power Dissipation JunctionTemperature StorageTemperature ) Symbol VCES VEBO lr PTOT T.

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Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
PH2323-1 CW Power Transistor/ 1W 2.3 GHz
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PH2729-150M Radar Pulsed Power Transistor-150 Watts 2.7-2.9 GHz/ 100ms Pulse/ 10% Duty

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an AMP cotn~any Linear Accelerator Pulsed Power Transistor, 16OW, 12~s Pulse, 10% Duty 2.856 GHz Features l l l l l l l l PH2856-160 NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic-Metal/Ceramic Package Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage ] Collector Current (Peak) Total Power Dissipation JunctionTemperature StorageTemperature ) Symbol VCES VEBO lr PTOT T, TSTG 1 Rating 65 3.0 15.0 700 200 -65 to +200 I Units V V * W “C “C I
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