The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
an AMP company
Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty 3.1 - 3.4 GHz PH3134-55L
Features
NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometty Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package
.225+010 (5.?2%2!5>
t
mLEcTIR
+j,j --A +f PAS I .130 (3.30) fl 2%
Absolute Maximum Ratings at 25°C
Parameter Collector-Emitter Voltage Symbol VES Rating 65 Units V
--6.72t.25)
Emitter-Base Voltage
UNLESS OTHERWISE
NOTED, TOLERANCES
ARE
(MIEMH$ER:.