The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Radar Pulsed Power Module, 115, 130, 145W, 100µs Pulse 3.1 - 3.5 GHz PHA3135-130M
V4.00
Features
q q q q q
NPN Silicon Power Transistor Input and Output Matched to 50Ω Duroid Circuit Board Easily Combined for High Power Transmitters Plated Copper Flange
Absolute Maximum Ratings at 25°C1
Parameter Suppy Voltage Input Power Output Power @ 3.3 GHz Thermal Resistance / Per Transistor Power Dissipation Operating Case Temp. Storage Temperature Absolute Maximum 40V 26.5V 200A 0.24A 400W -30 to 1200°C -40 to +125°C
Unless Otherwise Noted, Tolerances Are: Inches ±.005˝ (Millimeters ±13mm)
1. Operation of this device outside of these limits may cause permanent damage.