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Radar Pulsed Power Transistor, 75W, 300~s Pulse, 10% Duty PI-f2731 -75L 2.7 - 3.1 GHz
Features
NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic‘MetaUCeramic Package
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating
65 3.0 7.0
Units
Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation Junction Temperature StorageTemperature
VCES VES0 ‘c PTOi TJ TSW
V V A w
/ “C
.167=.010
190
200
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UNLYSS O-HfRW:S: KGTZD, Y--RANKS ARE
.06O=.CO3 u.s2:.05: iNCHES :MILL,METERS
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PI-F2731-75L Datasheet
