SA65-0003 Datasheet | Tyco Electronics

Down Converter, 1500 - 2000 MHz V 1.00 Features n n n n n n n QSOP-16 LNA Mixer integration. Typical conversion gain of 7 d B. Typical Two-Tone IM Ratio of ≥ 50 d Bm. LO Drive-Level: +13 d Bm. Surface Mount QSOP16 Package. Low Cost/High Performance. 50 ohm Nominal Impedance. Description M/A-’s SA65-0003 is an integrated assembly containing a Ga As FET MMIC LNA and Ga As FET mixer. This device is packaged in a 16-leaded QSOP plastic surface mount package. The amplifier can be biased with either +3V or +5V, the mixer requires no DC bias. The conversion gain of the integrated bination is typically 6 d B at +3V bias and 8 d B at +5V bias. The SA65-0003 is ideally suited for RF/IF munications applications requiring down conversion with some gain. This MCM contains a mixer that is fabricated using a mature 1-micron Ga As process, it also contains an LNA that is fabricated using a low cost mature 0.5-micron gate length Ga As MESFET process. Both die feature full passivation for increased performance and reliability. Remended PCB Layout Functional Block Diagram Down Converter, 1500 - 2000 MHz V 1.00 Electrical Specifications TA = +25°C, Z0=50 Ohms, RF = -10 d Bm1, LO = +13 d Bm, IDD ≈ 45 m A Parameter Conversion Gain Isolation 4 Reverse Isolation5 VSWR 6,7 Test Conditions1 LNA +3V LNA +5V LO to RF IN LO to IF LNA +3V LO RF IN IF LNA +3V LNA +5V Units d B d B d B d B d B Ratio Ratio Ratio d B d B Min 3.1 4.6 29 19 30 - - - 13 21 Typical 6.0 8.0 32 23 40 1.4:1 1.9:1 1.9:1 17.5 25 Max 6.6 8.8 - - - - 2.5:1 2.1:1 - - Input IP3 1,2,3 1. 2. 3. 4. 5. 6. 7. For IP3 measurements, RFIN = -24 d Bm, this low RF IN level gets amplified through the LNA. For IP3 measurements, RFIN2 = RFIN1 + 10 MHz, LO = RFIN1- 140 MHz. For IP3 measurements, IP3 = IMR/2 + PIN. RF IN to IF Isolation is typically 0 d B. Reverse Isolation is measured from IF to RFIN with the IF...