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TVB200SC Datasheet Circuit Protection Devices

Manufacturer: Tyco Electronics (now TE Connectivity)

Overview: Tyco/Electronics Raychem Corporation 308 Constitution Drive Menlo Park, CA 94025 800-227-4856 FAX 800-227-4866 PolySwitch® SiBar Thyristor Surge Protectors PRODUCT: TVB200SA DOCUMENT: 24304 PCN: 732781 REV LETTER: B REV DATE: AUGUST 16, 2001 PAGE NO.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

A MIN MAX mm: 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 .051 in: .160 .180 .130 .150 .075 .095 .077 .083 .002 * D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P Other Physical Characteristics m o .c U 4 t e e h S a t a .D w w w B C D* H J K P MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX S MIN MAX .152 .006 0.15 .006 Form Factor: Lead Material: Encapsulation Material: Solderability: Solder Heat Withstand: Solvent Resistance: Mechanical Shock: SMB (Surface Mount DO-214 Package) Tin/lead finish Epoxy, meets UL94 V-0 requirements per MIL-STD-750, Method 2026 per MIL-STD-750, Method 2031 per MIL-STD-750, Method 1022 per MIL-STD-750, Method 2016 Tape and Reel packaging per EIA 481-1 m o .c U 4 t e e h S a at .D w w w 0.30 .012 0.76 .030 1.27 .050 0.51 .020 5.21 .205 5.59 .220 REF Tyco/Electronics Raychem Corporation 308 Constitution Drive Menlo Park, CA 94025 800-227-4856 FAX 800-227-4866 PolySwitch® SiBar Thyristor Surge Protectors PRODUCT: TVB200SA DOCUMENT: 24304 PCN: 732781 REV LETTER: B REV DATE: AUGUST 16, 2001 PAGE NO.: 2 OF 2 DEVICE RATINGS @ 25º C (Both Polarities) Parameter Off-State Voltage, Maximum at ID = 5 µA Non-Repetitive Peak Impulse Current Double exponential waveform (Notes 1 and 2) 10x1000 µsec 10/560 µsec 10/160 µsec Symbol VDM IPP1 IPP2 IPP3 Value 200 50 70 100 Units V A A A Critical Rate of Rise of On-State Current Maximum 2x10 µsec waveform, VOC=2.5kV, ISC=500A peak DEVICE THERMAL RATINGS Storage Temperature Range Operating Temperature Range Blocking or conducting state Overload Junction Temperature Maximum;

Conducting state only di/dt 150 A/µs TSTG TA TJ -65 to 150 -40 to 125 +175 ºC ºC ºC ELECTRICAL CHARACTERIS

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