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MA08509D - 10W Power Amplifier Die Preliminary Release 8.0-11 GHz

General Description

The MA08509D is a three stage MMIC power amplifier fabricated using M/A-COM’s mature GaAs Self-Aligned MSAG® MESFET Process.

This product is fully matched to 50 ohms on both the input and the output.

Key Features

  • Broadband Performance 32% Typical Power Added Efficiency 50 Ω Input/Output Impedance Preliminary Release VDD V DD.
  • Self-Aligned MSAG® MESFET Process RF IN RF OUT VGG.

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MA08509D 10W Power Amplifier Die (8.0-11 GHz) FEATURES • • • Broadband Performance 32% Typical Power Added Efficiency 50 Ω Input/Output Impedance Preliminary Release VDD V DD • Self-Aligned MSAG® MESFET Process RF IN RF OUT VGG Description The MA08509D is a three stage MMIC power amplifier fabricated using M/A-COM’s mature GaAs Self-Aligned MSAG® MESFET Process. This product is fully matched to 50 ohms on both the input and the output. Maximum Ratings (T Rating A = 25 °C unless otherwise noted) Symbol Value DC Drain Supply Voltage DC Gate Supply Voltage RF Input Power Junction Temperature Storage Temperature VDD VGG PIN TJ TSTG 12 -6 500 150 -40 to +85 Unit Vdc Vdc mW °C °C ELECTRICAL CHARACTERISTICS VDD = 10.