MA4BPS301 Description
These silicon - glass PIN diode chips are fabricated with M/A-’s patented HMIC™ process. They contain a single shunt silicon PIN diode embedded in a glass substrate with dual 75 x 150 micron bond pads located near the chip edges. The large pads allow use of multiple bond wires.
MA4BPS301 Key Features
- Bond Pads Removed From Active Junction Large Bond Pads Support Multiple Bond Wires Rugged Silicon-Glass Construction Sil
- glass PIN diode chips are fabricated with M/A-’s patented HMIC™ process. They contain a single shunt silicon PIN diode e