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MA4ST563 - High Q Hyperabrupt Tuning Varactors

General Description

The MA4ST550 family of high Q Silicon Hyperabrupt Tuning Varactors is available in a series of low parasitic capacitance microwave packages or in chip form.

The MA4ST550 series of diodes is available with junction capacitances of approximately 0.8 pF to 8.2 pF at -4 volts.

Key Features

  • q q q MA4ST550 Series V3.00 Case Styles q High Q Usable Capacitance Change of 7:1 Low Reverse Leakage for Good Post Tuning Drift Characteristics Reproducible C-V Curves.

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📁 Similar Datasheet

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Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
MA4ST560 High Q Hyperabrupt Tuning Varactors
MA4ST561 High Q Hyperabrupt Tuning Varactors
MA4ST562 High Q Hyperabrupt Tuning Varactors
MA4ST550 High Q Hyperabrupt Tuning Varactors
MA4ST551 High Q Hyperabrupt Tuning Varactors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Q Hyperabrupt Tuning Varactors Features q q q MA4ST550 Series V3.00 Case Styles q High Q Usable Capacitance Change of 7:1 Low Reverse Leakage for Good Post Tuning Drift Characteristics Reproducible C-V Curves Description The MA4ST550 family of high Q Silicon Hyperabrupt Tuning Varactors is available in a series of low parasitic capacitance microwave packages or in chip form. The MA4ST550 series of diodes is available with junction capacitances of approximately 0.8 pF to 8.2 pF at -4 volts. These diodes have capacitance change ratios as high as 7:1. 30 31 Applications The MA4ST550 series is appropriate for use in VCOs with frequencies within the range of approximately 1-14 GHz where a large capacitance change is required.