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AlGaInP/Si Yellow Chip ---TK540UYH
1. Scope
‧ AlGaInP High- Brightness LED chip.
2. Structure
‧AlGaInP on Silicon ‧N Electrode (cathode) side ‧P Electrode (anode) side : Gold : Gold Alloy 1000 um )
3. Size
‧Chip size : 40 mil 40 mil ( 1000 um ‧Chip height : 200 ± 10 um ‧Pattern drawing : per fig. 1
4. Electro-Optical Characteristics
Parameter Forward Voltage Reverse Voltage Luminous Intensity Wavelength Spectrum Width of Half Value Symbol VF IR IV d Condition IF =350 mA IR = 10 V IF =350 mA IF =20 mA IF =20 mA Min. Typ. 2.65 (Ta = +25 ) Max. Unit 2.7 V 10 µA mcd 592 nm nm
586
590 20
Maximum reverse-biased voltage < 60V; therefore, VZ test is forbidden.
‧Rank R : min. 4300 ‧Rank S : min. 5000 ‧Rank T : min.
TK540UYH Datasheet