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InGaAs / InP PIN Chip ---TK 920M3B
1. Scope
•The specification applies to photo-diode chips for PIN-TIA. •Type : TK920M3B.
2. Structure
•InGaAs / InP PIN Chip. •P Electrode (anode) : Gold. •N Electrode (cathode) : Gold.
3. Size
•Chip size : 500 × 500μm •Thickness : 250μm •Active area : 300μm (diameter) •Pattern drawing : per fig. 1
4. Electro-Optical Characteristics
Parameter Responsivity Dark Current Symbol R Id Test Condition Vr=5V,λ=1300 nm Vr=5V Min. 0.9 Typ. 1 1 (Ta = +25 ℃) Max. Unit A/W 5 nA
250
250 500 Active area 300Ø P Electrode Cathode 500
Anode Ar Coating
P I N
250
500
Unit : μm
fig. 1 2002 Sep.
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TK920M3B Datasheet