The QM2518C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.
Key Features
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available
Product Summery
BVDSS 20V
RDSON 90mΩ
ID 1.52A.
Full PDF Text Transcription for QM2518C1 (Reference)
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QM2518C1 Dual N-Ch 20V Fast Switching MOSFETs General Description The QM2518C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provi...
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mance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2518C1 meet the RoHS and Green Product requirement with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS 20V RDSON 90mΩ ID 1.
QM2518C1 Datasheet
