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QM2608N8 Datasheet MOSFETs

Manufacturer: UBIQ

General Description

The QM2608N8 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.

The QM2608N8 meet the RoHS and Green Product requirement with full function reliability approved.

Overview

QM2608N8 N-Ch and P-Ch Fast Switching MOSFETs General.

Key Features

  • z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS 20V -20V RDSON 48mΩ 70mΩ ID 3.8A -3.4A.