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QM3003G Datasheet PDF

UBIQ QM3003G

The QM3003G is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM3003G meet the RoHS and Green Product requirement with full function reliability approved.
Part No. QM3003G
Datasheet QM3003G Download
Manufacturer
UBIQ
Description P-Ch 30V Fast Switching MOSFETs
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QM3003G datasheet page 1 preview

GENERAL DESCRIPTION

FEATURES

z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available

ABSOLUTE MAXIMUM RATINGS

Product Summery BVDSS -30V RDSON 32mΩ ID -5.8A

APPLICATIONS

z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch SOT223 Pin Configuration D GD S Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Rating -30 ±20 -5.8 -4.6 -24 1.5 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Typ. ----- Max. 85 30 Unit ℃/W ℃/W Rev A.02 D050611 1 QM3003G P-Ch 30V Fast Switching MOSFETs El...
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