QM3016M3 - N-Ch 30V Fast Switching MOSFETs

The QM3016M3/N3 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

• z Advanced high cell density Trench technology zd Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Pin Configuration D D S SS G QM3016M3in S S SG QM3016N3in Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current.