Datasheet4U Logo Datasheet4U.com

QM3809M6 - Dual N-Ch Fast Switching MOSFETs

General Description

The QM3809M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

Key Features

  • z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Dual N-Ch Fast Switching MOSFETs Product Summery CH Die1 Die2 BVDSS 30V 30V RDSON 9mΩ 5.5mΩ ID 57A 72A.

📥 Download Datasheet

Datasheet Details

Part number QM3809M6
Manufacturer UBIQ
File Size 379.50 KB
Description Dual N-Ch Fast Switching MOSFETs
Datasheet download datasheet QM3809M6 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
QM3809M6 General Description The QM3809M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3809M6 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Dual N-Ch Fast Switching MOSFETs Product Summery CH Die1 Die2 BVDSS 30V 30V RDSON 9mΩ 5.