QM6006S
Description
The QM6006S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM6006S meet the Ro HS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cd V/dt effect decline z 100% EAS Guaranteed z Green Device Available
Product Summery
BVDSS 60V
RDSON 18mΩ
ID 6.3A
Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z LCD/LED back light
SOP8 Pin Configuration
D D DD
Absolute Maximum Ratings
S SS G
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM EAS IAS PD@TA=25℃ TSTG
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche...
