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QM6007S Datasheet PDF

UBIQ QM6007S

The QM6007S is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM6007S meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved.
Part No. QM6007S
Datasheet QM6007S Download
Manufacturer
UBIQ
Description P-Ch 60V Fast Switching MOSFETs
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QM6007S datasheet page 1 preview

GENERAL DESCRIPTION

FEATURES

z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS -60V RDSON 170mΩ ID -2.5A

APPLICATIONS

z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch SOP8 Pin Configuration DD DD

ABSOLUTE MAXIMUM RATINGS

S SS G Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, -VGS @ -10V1 Continuous Drain Current, -VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Rating -60 ±20 -2.5 -2 -5 17 -15.3 2.1 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Typ. ----- Max. 85 6...
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