QM8205V - Dual N-Ch Fast Switching MOSFETs

Description

The QM8205V is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.

Features

z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available QM8205V Dual N-Ch Fast Switching MOSFETs Product Summery BVDSS 20V RDSON 25mΩ ID 6A.

UBIQ

📥 Download Datasheet

Datasheet Details

Part number	QM8205V
Manufacturer	UBIQ
File Size	352.55 KB
Description	Dual N-Ch Fast Switching MOSFETs
Datasheet	QM8205V Datasheet
Additional preview pages of the QM8205V datasheet.

📁 Similar Datasheet

QM800HA-24B - Transistor (Mitsubishi Electric Semiconductor)
QM800HA-2HB - Transistor (Mitsubishi Electric Semiconductor)
QM80DY-3H - Transistor (Mitsubishi Electric Semiconductor)

Other Datasheets by UBIQ

QM8014D - N-Ch 80V Fast Switching MOSFETs
QM8014U - N-Ch 80V Fast Switching MOSFETs
QM8020AP - N-Ch 80V Fast Switching MOSFETs

Full PDF Text Transcription

Click to expand full text

General Description The QM8205V is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM8205V meet the RoHS and Green Product requirement with full function reliability approved.

Published: Dec 12, 2015 |