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QN3103M6N - N-Channel 30V Fast Switching MOSFET

General Description

The QN3103M6N is the highest performance trench N-Channel MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

The QN3103M6N meet the RoHS and Green Product requirement with full function reliability approved.

Key Features

  • Advanced high cell density Trench technology Super Low Gate Charge Green Device Available Product Summary BVDSS 30V RDSON (VGS=10V) 6.3mΩ ID (TC=25℃) 68A.

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Datasheet Details

Part number QN3103M6N
Manufacturer UBIQ
File Size 331.46 KB
Description N-Channel 30V Fast Switching MOSFET
Datasheet download datasheet QN3103M6N Datasheet

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QN3103M6N N-Channel 30V Fast Switching MOSFET General Description The QN3103M6N is the highest performance trench N-Channel MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QN3103M6N meet the RoHS and Green Product requirement with full function reliability approved. Features Advanced high cell density Trench technology Super Low Gate Charge Green Device Available Product Summary BVDSS 30V RDSON (VGS=10V) 6.