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UM2147 - 4K x 1 High Speed NMOS SRAM

General Description

The UMC UM2147 is a 4096-Bit Static Random Access Memory organized 4096 words by 1-bit and is fabricated using UMC's new scaled N-channel silicon gate technology.

It is designed using fully static circuitry, therefore requiring no clock or refreshing to operate.

Key Features

  • 45 ns maximum access time.
  • No clocks or strobes required.
  • Automatic CE power down.
  • Identical cycle and access times.
  • Single +5V supply (± 10%).
  • Pinout and function compatible to SY2147.
  • Total TTL compatible: All inputs and outputs.
  • Separate data input and output.
  • High density 18-pin package.
  • Three-state output General.

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Datasheet Details

Part number UM2147
Manufacturer UMC
File Size 182.21 KB
Description 4K x 1 High Speed NMOS SRAM
Datasheet download datasheet UM2147 Datasheet

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UM2148 1K x 4 High Speed NMOS SRAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SUMO UM2147 High Speed NMOS SRAM Features • 45 ns maximum access time • No clocks or strobes required • Automatic CE power down • Identical cycle and access times • Single +5V supply (± 10%) • Pinout and function compatible to SY2147 • Total TTL compatible: All inputs and outputs • Separate data input and output • High density 18-pin package • Three-state output General Description The UMC UM2147 is a 4096-Bit Static Random Access Memory organized 4096 words by 1-bit and is fabricated using UMC's new scaled N-channel silicon gate technology. It is designed using fully static circuitry, therefore requiring no clock or refreshing to operate. Address set-up times are not required and the data is read out non-destructively with the same polarity as the input data.