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CHA3080-98F - 71 ~ 76 GHz Medium Power Amplifier

General Description

The CHA3080-98F is a three-stage monolithic Medium Power Amplifier.

This circuit includes a power detector which integrates a directional coupler, a detection diode and a reference diode to be used in differential mode.

Key Features

  • Broadband performances: 71-76GHz.
  • 16dB linear gain.
  • 19dBm power at 1dB compression.
  • 20dB power detector dynamic range.
  • BCB layer protection.
  • DC bias: Vd=3.5V@Id=280mA.
  • Chip size 3.96x1.78x0.07mm Output Power (dBm) and Linear Gain (dB) 22 26 20 24 18 22 Pout @ 1dB comp 16 Pout @ 3dB comp 20 14 Linear Gain 18 12 16 10 14 8 12 69 70 71 72 73 74 75 76 77 78 79 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter.

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Datasheet Details

Part number CHA3080-98F
Manufacturer UMS
File Size 504.69 KB
Description 71 ~ 76 GHz Medium Power Amplifier
Datasheet download datasheet CHA3080-98F Datasheet

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CHA3080-98F 71-76GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3080-98F is a three-stage monolithic Medium Power Amplifier. This circuit includes a power detector which integrates a directional coupler, a detection diode and a reference diode to be used in differential mode. It is dedicated to E-band telecommunication, particularly well suited for the new generation of high capacity Backhaul. The circuit is manufactured with a pHEMT process, 0.1µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form with BCB layer protection.