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AO4614 - 40V P-Channel and N-Channel MOSFET

General Description

The AO4614 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Key Features

  • VDS (V)=40V ID=6A(VGS=10V) RDS(ON).

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Datasheet Details

Part number AO4614
Manufacturer UMW
File Size 491.27 KB
Description 40V P-Channel and N-Channel MOSFET
Datasheet download datasheet AO4614 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UMW AO4614 40V P-Channel and N-Channel MOSFET 1.Description The AO4614 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. 2.1Features VDS (V)=40V ID=6A(VGS=10V) RDS(ON)<20mΩ(VGS=10V) RDS(ON)<26mΩ(VGS=4.5V) 2.2Features VDS (V)=-40V ID=-5A(VGS=-10V) RDS(ON)<39mΩ(VGS=-10V) RDS(ON)<50mΩ(VGS=-4.5V) 3.Pinning information Pin Symbol Description SOP-8 2,4 G2, G1 GATE 8765 D2 D2 D1 D1 D1 D2 1,3 5,6,7,8 S2, S1 D1, D2 SOURCE DRAIN G1 G2 S2 G2 S1 G1 S1 S2 1234 4.Absolute Maximum Ratings TA= 25°C Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B Avalanche Current B Repetitive avalanche energy L=0.