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AO6802 - Dual 30V N-ChanneI MOSFET

General Description

The AO6802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

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Datasheet Details

Part number AO6802
Manufacturer UMW
File Size 258.06 KB
Description Dual 30V N-ChanneI MOSFET
Datasheet download datasheet AO6802 Datasheet

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UMW AO6802 Dual 30V N-ChanneI MOSFET 1.Description The AO6802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. 2.Product Summary VDS (V)=30V RDS(ON)<40mΩ(VGS=10V) RDS(ON)<55mΩ(VGS=4.5V) 3.Pinning information Pin Symbol Description 1,3 G1, G2 GATE 5,2 S1, S2 SOURCE 6,4 D1, D2 DRAIN D1 D2 G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 G1 G2 S1 S2 SOT23-6 4.Absolute Maximum Ratings TA= 25°C Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current C Power Dissipation B Junction and Storage Temperature Range TA=25°C TA=70°C TA=25°C TA=70°C Symbol VDS VGS ID IDM PD TJ, TSTG Maximum 30 ±20 3.5 3 20 1.15 0.