Datasheet4U Logo Datasheet4U.com

AOSP21321 - -30V P-ChanneI MOSFET

Datasheet Summary

Description

Latest Advanced Trench Technology Low RDS(ON) High Current Capability RoHS and Halogen-Free Compliant 3.Pinning information Pin 1,2,3 4 5,6,7,8 Symbol S G D Description SOURCE GATE DRAIN SOP-8 5678 D D D D S S S G 1234 D G S 4.Absolute Maximum Ratings TA=25°C unless otherwise noted

Features

  • VDS=-30V ID=-11A(VGS=-10V) RDS(ON).

📥 Download Datasheet

Datasheet preview – AOSP21321

Datasheet Details

Part number AOSP21321
Manufacturer UMW
File Size 307.60 KB
Description -30V P-ChanneI MOSFET
Datasheet download datasheet AOSP21321 Datasheet
Additional preview pages of the AOSP21321 datasheet.

📁 Similar Datasheet

  • AOSP21321 - 30V P-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOSP21307 - 30V P-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOSP21311C - 30V P-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOSP21313C - 30V P-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOSP21357 - 30V P-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOSP32314 - 30V N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOSP32320C - 30V N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOSP32368 - 30V N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOSP62530 - 150V N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOSP66406 - 40V N-Channel MOSFET (Alpha & Omega Semiconductors)
Other Datasheets by UMW

    Full PDF Text Transcription

    Click to expand full text
    UMW AOSP21321 -30V P-ChanneI MOSFET 1.Features VDS=-30V ID=-11A(VGS=-10V) RDS(ON)<17mΩ (VGS=-10V) RDS(ON) <30mΩ(VGS=-4.5V) 2.Description Latest Advanced Trench Technology Low RDS(ON) High Current Capability RoHS and Halogen-Free Compliant 3.Pinning information Pin 1,2,3 4 5,6,7,8 Symbol S G D Description SOURCE GATE DRAIN SOP-8 5678 D D D D S S S G 1234 D G S 4.Absolute Maximum Ratings TA=25°C unless otherwise noted Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy Parameter Power Dissipation B Junction and Storage Temperature Range TA=25°C TA=70°C L=0.1mH C TA=25°C TA=70°C Symbol VDS VGS ID IDM IAS EAS PD TJ, TSTG Rating -30 ±25 -11 -8.5 -56 -33 54 3.1 2.
    Published: |