AOSP21321 - -30V P-ChanneI MOSFET

General Description

Latest Advanced Trench Technology Low RDS(ON) High Current Capability RoHS and Halogen-Free Compliant 3.Pinning information Pin 1,2,3 4 5,6,7,8 Symbol S G D Description SOURCE GATE DRAIN SOP-8 5678 D D D D S S S G 1234 D G S 4.Absolute Maximum Ratings TA=25°C unless otherwise noted

Key Features

VDS=-30V ID=-11A(VGS=-10V) RDS(ON).

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Datasheet Details

Part number	AOSP21321
Manufacturer	UMW
File Size	307.60 KB
Description	-30V P-ChanneI MOSFET
Datasheet	AOSP21321 Datasheet

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UMW AOSP21321 -30V P-ChanneI MOSFET 1.Features VDS=-30V ID=-11A(VGS=-10V) RDS(ON)<17mΩ (VGS=-10V) RDS(ON) <30mΩ(VGS=-4.5V) 2.Description Latest Advanced Trench Technology Low RDS(ON) High Current Capability RoHS and Halogen-Free Compliant 3.Pinning information Pin 1,2,3 4 5,6,7,8 Symbol S G D Description SOURCE GATE DRAIN SOP-8 5678 D D D D S S S G 1234 D G S 4.Absolute Maximum Ratings TA=25°C unless otherwise noted Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy Parameter Power Dissipation B Junction and Storage Temperature Range TA=25°C TA=70°C L=0.1mH C TA=25°C TA=70°C Symbol VDS VGS ID IDM IAS EAS PD TJ, TSTG Rating -30 ±25 -11 -8.5 -56 -33 54 3.1 2.