UMW C009T
N-Channel MOSFET
UMW R UMW 2300A UMW 2300N-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX 25mΩ@4.5V 20 V 34.5mΩ@2.5V ID 6A SOT-23 1. GATE 2. SOURCE 3. DRAIN FEATURE z TrenchFET Power MOSFET APPLICATION z Load Switch for Portable Devices z DC/DC Converter MARKING C009T Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source-Drain Current(Diode Conduction) Power Dissipation Thermal Resistance from Junction to Ambient (t≤5s) Operating Junction Storage Temperature VDS VGS ID IS PD RθJA TJ TSTG Value 20 ±12 6 0.6 312.5 150 -55 ~+150 Unit V A W ℃/W ℃ 1 友台半导体有限公司 UMW R UMW 2300A Ta=25 ℃ unless otherwise specified Parameter Symbol Test Condition Static Drain-source breakdown voltage Gate-threshold voltage Gate-body leakage Zero gate voltage drain current Drain-source on-resistancea Forward transconductancea V(BR)DSS VGS(th) IGSS IDSS rDS(on) gfs VGS = 0V, ID =10µA VDS =VGS, ID =50µA VDS =0V, VGS =±8V V...