EL357 Description
The UMW EL357 series bine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar phototransistor detector in a plastic SOP4 package. With the robust coplanar double mold structure, UMW EL357 series provide the most stable isolation.
EL357 Key Features
- High isolation 3750 VRMS
- CTR flexibility available see order
- DC input with transistor output
- Operating temperature range
- 55 °C to 110 °C
- REACH pliance
- Halogen free
- MSL class 1
- UL Recognized: UL1577, File No. E492440